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CS8251 PROGRAMMING IN C Question Bank Regulation 2017 Anna University

CS8251 PROGRAMMING IN C Question Bank

CS8251 PROGRAMMING IN C Question Bank Regulation 2017 Anna University free download. PROGRAMMING IN C CS8251 Question Bank pdf free download.

Sample CS8251 PROGRAMMING IN C Question Bank

11.
Develop a C program for the following :
(i). To find the area and circumference of a circle
with radius r.(6)
(ii). To find the sum of first 100 integers.(7)
BTL -6
Create
12.
Write a C program for the following :
(i). To find the sum of the digits of a number.
(123 => 1+2+3=6.(7)
(ii). To find the sum of all odd / even numbers
between 1 and 100.(6)
BTL -4
Analyze
13.
Write a C program for the following :
(i). To generate the first n numbers in a Fibonacci series.(7)
(ii). To find the factorial of a given number.(6)
BTL -1
Remember
14.
Write a C program to generate Armstrong number between 100 and 999.(13)
CS8251 PROGRAMMING IN C Question Bank
Developa C program for the following :
(i) To check whether a number is prime or not.(8)
(ii). To convert the temperature given in Fahrenheit to Celsius and vice versa.(7)
BTL -6
Create
2.
Compare and contrast branching and looping statements.(15)
CS8251 PROGRAMMING IN C Question Bank
Design a C program to convert the given decimal number into binary, octal and hexadecimal numbers. (15)
BTL -6
Create
4.
Summarize on algorithm, flowchart and pseudo code with an example.(15)

1.
(i) Explain the need for array variables. Describe thefollowing with respect to arrays.Declaration of array and accessing an array element. (6)
(ii) Write a C program to re-order a one-dimensional array of numbers in descending order. (7)

6.
Write a C program for transpose of a matrix.(13)
CS8251 PROGRAMMING IN C Question Bank
Discuss about the runtime initialization of a two dimensional array.(13)
BTL -1
Remember
8.
Write a C program to sort the n numbers using selection sort. (13)

Subject name PROGRAMMING IN C
Semester 2
Regulation 2017 REGULATION
File details PDF format in attached

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CS8251 PROGRAMMING IN C SYLLABUS

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CS8251 PROGRAMMING IN C Important Questions Regulation 2017 Anna University

CS8251 PROGRAMMING IN C Important Questions

CS8251 PROGRAMMING IN C Important Questions Regulation 2017 Anna University free download. PROGRAMMING IN C CS8251 Important Questions pdf free download.

Sample CS8251 PROGRAMMING IN C Important Questions 

1.
Describe the structure of a C program with an example.(13)
BTL -1
Remember
2.
Discuss about the constants, expressions and statements in ‘C’. (13)
BTL -2
Understand
3.
Illustrate about the various data types in ‘C’ and write a C program to find the sum of 10 non-negative numbers entered by the user.(13)
BTL -3
Apply
4. CS8251 PROGRAMMING IN C Important Questions
(i) Explain the different types of operators used in ‘C’ with necessary program. (8)
(ii) Write a C program to check the integer is Palindrome or not.(5)
BTL -2
Understand
5.
Explain the purpose of decision making and looping statement.Explain in detail the operation of various looping statements in C with suitable examples.(13)
BTL -1
Remember
6.
Write short notes on the following: (5+4+4)
(i). ‘for’ loop
(ii). ‘while’ loop
(iii). ‘do…while’ loop
BTL -1
Remember
7.
Illustrate a program for adding two numbers with the help of flowchart. (13)
BTL -3
Apply
8. CS8251 PROGRAMMING IN C Important Questions
Discuss about pseudo code and explain with an example(13)
BTL -2
Understand
9.
Explain the following:
i. Keywords (3) ii. Identifiers (3)
iii. C character set (3)
iv. Constants (4).
BTL -5
Evaluate
10.
Write a C program for the following :
(i). To check whether a given year is leap or not.(5)
(ii). To find the roots of a quadratic equation.(8) CS8251 PROGRAMMING IN C IQ

Subject name PROGRAMMING IN C
Semester 2
Regulation 2017 REGULATION
File details PDF format in attached

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CS8251 PROGRAMMING IN C Notes Regulation 2017 Anna University

CS8251 PROGRAMMING IN C Notes

CS8251 PROGRAMMING IN C Notes Regulation 2017 Anna University free download. PROGRAMMING IN C CS8251 Notes pdf free download.

UNIT I BASICS OF C PROGRAMMING CS8251 PROGRAMMING IN C Notes

Introduction to programming paradigms – Structure of C program – C programming: Data Types – Storage classes – Constants – Enumeration Constants – Keywords – Operators: Precedence and Associativity – Expressions – Input/Output statements, Assignment statements – Decision making statements – Switch statement – Looping statements – Pre-processor directives – Compilation process

UNIT II ARRAYS AND STRINGS CS8251 PROGRAMMING IN C Notes

Introduction to Arrays: Declaration, Initialization – One dimensional array – Example Program: Computing Mean, Median and Mode – Two dimensional arrays – Example Program: Matrix Operations (Addition, Scaling, Determinant and Transpose) – String operations: length, compare, concatenate, copy – Selection sort, linear and binary search.

UNIT III FUNCTIONS AND POINTERS CS8251 PROGRAMMING IN C Notes

Introduction to functions: Function prototype, function definition, function call, Built-in functions (string functions, math functions) – Recursion – Example Program: Computation of Sine series, Scientific calculator using built-in functions, Binary Search using recursive functions – Pointers – Pointer operators – Pointer arithmetic – Arrays and pointers – Array of pointers – Example Program: Sorting of names – Parameter passing: Pass by value, Pass by reference – Example Program: Swapping of two numbers and changing the value of a variable using pass by reference.

UNIT IV STRUCTURES CS8251 PROGRAMMING IN C Notes

Structure – Nested structures – Pointer and Structures – Array of structures – Example Program using structures and pointers – Self referential structures – Dynamic memory allocation – Singly linked list – typedef.

UNIT V FILE PROCESSING CS8251 Notes

Files – Types of file processing: Sequential access, Random access – Sequential access file – Example Program: Finding average of numbers stored in sequential access file – Random access file – Example Program: Transaction processing using random access files – Command line arguments

Subject name PROGRAMMING IN C
Semester 2
Regulation 2017 REGULATION
File details PDF format in attached

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CS8251 PROGRAMMING IN C SYLLABUS

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EC8252 Electronic Devices Question Paper Regulation 2017 Anna University

EC8252 Electronic Devices Questions Paper

EC8252 Electronic Devices Question Paper Regulation 2017 Anna University free download. Electronic Devices ED EE8252 Question Paper pdf free download.

Details On EC8252 Electronic Devices Question Paper

Why an ordinary transistor is called bipolar?
The operation of the transistor depends on both majority and minority carriers. So it is called bipolar device.

Collector region of transistor is larger than emitter. Why? EC8252 Electronic Devices Question Paper
Collector is made physically larger than emitter and base because collector is to dissipate much power.

Why is BJT is called current controlled device?
The output voltage, current, or power is controlled by the input current in a transistor. So it is called the current controlled device. EC8252 Electronic Devices Question Paper

Among CE, CB, CC which one is most popular. Why?
CE is most popular among the three because it has high gain compared to base and collector configuration. It has the gain about to 500 that finds excellent usage in audio frequency applications.

Define current amplification factor EC8252 Electronic Devices Question Paper
In a transistor amplifier with a.c. input signal, the ratio of change in output current to be the change in input current is known as the current amplification factor.

Why it is called field effect transistor?
The drain current ID of the transistor is controlled by the electric field that extends into the channel due to reverse biased voltage applied to the gate, hence this device has been given the name Field Effect Transistor.

Define Early Effect. EC8252 Electronic Devices Question Paper
A variation of the base-collector voltage results in a variation of the quasi-neutral width in the base. The gradient of the minority-carrier density in the base therefore changes, yielding an increased collector current as the collector-base current is increased. This effect is referred to as the Early effect. EC8252 Electronic Devices Question Paper

Subject name ELECTRONIC DEVICES
Semester 2
Regulation 2017 REGULATION
File details PDF format in attached

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EC8252 ELECTRONIC DEVICES Syllabus

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question bank

EC8252 Electronic Devices Question Bank Regulation 2017 Anna University

EC8252 Electronic Devices Questions Bank

EC8252 Electronic Devices Question Bank Regulation 2017 Anna University free download. Electronic Devices ED EE8252 Question Bank pdf free download.

Sample EC8252 ELECTRONIC DEVICES Question Bank

1.Explain the drift and diffusion currents for PN diode. (8)
2.derive the quantitative theory of PN diode currents. (16)
3.Give diode current equation (6)
4.Explain the operation of PN junction under forward bias condition with its characteristics. (10)
5.Explain the operation of PN junction under reverse bias condition with its characteristics. (10)
6.Explain details about the switching characteristics on PN diode with neat Sketch. (12) EC8252 ELECTRONIC DEVICES Question Bank
1. Intrinsic semiconductor 2. Extrinsic semiconductor.
2.Differentiate between intrinsic and extrinsic semiconductor
Pure form of semiconductors are said to be intrinsic semiconductor.
Ex: germanium, silicon.
It has poor conductivity
If certain amount of impurity atom is added to intrinsic semiconductor the resulting
semiconductor is Extrinsic or impure Semiconductor
It has good conductivity.
3.Define drift current? EC8252 ELECTRONIC DEVICES Question Bank
When an electric field is applied across the semiconductor, the holes move towards the
negative terminal of the battery and electron move towards the positive terminal of the battery.
This drift movement of charge carriers will result in a current termed as drift current.
4.Give the expression for drift current density
Drift current density due to electrons
Jn = q n μnE
Where,
Jn – drift current density due to electron
q- Charge of electron

5.Define the term diffusion current?
A concentration gradient exists, if the number of either electrons or holes is greater in one
region of a semiconductor as compared to the rest of the region. The holes and electron EC8252 ELECTRONIC DEVICES Question Bank
18.Write the application of pn diode
 Can be used as rectifier in DC Power Supplies.
 In Demodulation or Detector Circuits.
 In clamping networks used as DC Restorers
 In clipping circuits used for waveform generation.
 As switches in digital logic circuits.
 In demodulation circuits

Subject name ELECTRONIC DEVICES
Semester 2
Regulation 2017 REGULATION
File details PDF format in attached

EC8252 ELECTRONIC DEVICES Question Bank Click Here To Download

EC8252 ELECTRONIC DEVICES Syllabus

EC8252 ELECTRONIC DEVICES Notes

EC8252 ELECTRONIC DEVICES Important Questions

EC8252 Electronic Devices Question Paper

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Important question

EC8252 ELECTRONIC DEVICES Important Questions Regulation 2017 Anna University

EC8252 ELECTRONIC DEVICES Important Questions

EC8252 ELECTRONIC DEVICES Important Questions Regulation 2017 Anna University free download. ELECTRONIC DEVICES ED EE8252 Important Questions pdf free download.

Sample EC8252 ELECTRONIC DEVICES Important Questions

1.What are semiconductors?
The materials whose electrical property lies between those of conductors and insulators
are known as Semiconductors. Ex germanium, silicon.
It has two types. EC8252 ELECTRONIC DEVICES Important Questions
1. Intrinsic semiconductor 2. Extrinsic semiconductor.
2.Differentiate between intrinsic and extrinsic semiconductor
Pure form of semiconductors are said to be intrinsic semiconductor.
Ex: germanium, silicon.
It has poor conductivity
If certain amount of impurity atom is added to intrinsic semiconductor the resulting
semiconductor is Extrinsic or impure Semiconductor
It has good conductivity.
3.Define drift current? EC8252 ELECTRONIC DEVICES Important Questions
When an electric field is applied across the semiconductor, the holes move towards the
negative terminal of the battery and electron move towards the positive terminal of the battery.
This drift movement of charge carriers will result in a current termed as drift current.
4.Give the expression for drift current density
Drift current density due to electrons
Jn = q n μnE
Where,
Jn – drift current density due to electron
q- Charge of electron

5.Define the term diffusion current?
A concentration gradient exists, if the number of either electrons or holes is greater in one
region of a semiconductor as compared to the rest of the region. The holes and electron EC8252 ELECTRONIC DEVICES Important Questions
tend to move from region of higher concentration to the region of lower concentration.
This process in called diffusion and the current produced due this movement is diffusion
current.

Subject name ELECTRONIC DEVICES
Semester 2
Regulation 2017 REGULATION
File details PDF format in attached

EC8252 ELECTRONIC DEVICES Important Questions Click Here To Download

EC8252 ELECTRONIC DEVICES Syllabus

EC8252 ELECTRONIC DEVICES Notes

EC8252 ELECTRONIC DEVICES Question Bank

EC8252 Electronic Devices Question Paper

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EC8252 ELECTRONIC DEVICES Notes ED Regulation 2017 Anna University

EC8252 ELECTRONIC DEVICES Notes

EC8252 ELECTRONIC DEVICES Notes Regulation 2017 Anna University free download. ELECTRONIC DEVICES ED EE8252 Notes pdf free download.

UNIT I SEMICONDUCTOR DIODE EC8252 ELECTRONIC DEVICES Notes

PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.

UNIT II BIPOLAR JUNCTION TRANSISTORS EC8252 ED Notes

NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE, CB, CC – Hybrid -π model – h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.

UNIT III FIELD EFFECT TRANSISTORS EC8252 ED Notes

JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.

UNIT IV SPECIAL SEMICONDUCTOR DEVICES EC8252 ED Notes

Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.

UNIT V POWER DEVICES AND DISPLAY DEVICES EC8252 ELECTRONIC DEVICES Notes

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.

Subject name ELECTRONIC DEVICES
Semester 2
Regulation 2017 REGULATION
File details PDF format in attached

EC8252 ELECTRONIC DEVICES Notes Click Here To Download

EC8252 ELECTRONIC DEVICES Syllabus

EC8252 ELECTRONIC DEVICES Important Questions

EC8252 ELECTRONIC DEVICES Question Bank

EC8252 Electronic Devices Question Paper

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EE8251 Circuit Theory Question Bank Regulation 2017 Anna University

EE8251 Circuit Theory Question Bank

EE8251 Circuit Theory Question Bank Regulation 2017 Anna University free download. Circuit Theory CT EE8251 Question Bank pdf free download.

Sample EE8251 Circuit Theory Question Bank: 

Define Ohm’s Law .
2. State Kirchhoff’s Laws.
3. The resistance of 1.5Ω and 3.5Ω are connected in parallel and this parallel combination is connected in series with a resistance of1.95 EE8251 Circuit Theory Question Bank
Ω. Calculate the equivalent resistance value.
4. Summarize the classifications of Circuit elements.
5. Find ‘R’ in the circuit shown below.

(i) Derive and list the expressions for resistors in series and
parallel. (6 marks) EE8251 Circuit Theory Question Bank
(ii) Two 50 ohms resistors are connected in series .When a resistor R is connected across one of them, the total circuit resistance is 60 ohms. Calculate the value of R. If the supply voltage across the above circuit is 60V, find the current passing through individual resistance. EE8251 Circuit Theory Question Bank

Calculate the equivalent current source for a voltage source of 10V in series with a 60ohm resistance.
3. Illustrate the equivalent voltage source for a current source of 15A when connected in parallel with 5 ohm resistance EE8251 CT Question Bank
4. Given that the resistors Ra, Rb and Rc are connected electrically in star. Formulate the equations for resistors in equivalent delta
5. Three resistors Rab, Rbc and Rca are connected in delta. Re-write the expression for resistors in equivalent star EE8251 CT Question Bank
6. How will you express the Norton’s equivalent circuit from Thevenin’s equivalent circuit?
7. Let a network has Thevenin’s equivalent circuit with source of 5Vrmsand impedance of 50-j30Ω.Find the optimum value of load to derive maximum power from the network.

Subject name Circuit Theory
Subject Code EE8251
Regulation 2017 Regulation

EE8251 Circuit Theory Question Bank Click Here to Download

EE8251 Circuit Theory Syllabus

EE8251 Circuit Theory Important Questions

EE8251 Circuit Theory Notes

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r2017 notes

EE8251 Circuit Theory Notes Regulation 2017 Anna University

EE8251 CIRCUIT THEORY Notes Regulation 2017

EE8251 Circuit Theory Notes Regulation 2017 Anna University free download. Circuit Theory CT EE8251 Notes pdf free download.

UNIT I BASIC CIRCUITS ANALYSIS EE8251 Circuit Theory Notes

Resistive elements – Ohm’s Law Resistors in series and parallel circuits – Kirchoffs laws – Mesh current and node voltage – methods of analysis.

UNIT II NETWORK REDUCTION AND THEOREMS FOR DC AND AC IRCUITS EE8251 Circuit Theory Notes

Network reduction: voltage and current division, source transformation – star delta conversion. Thevenins and Norton Theorems – Superposition Theorem – Maximum power transfer theorem –
Reciprocity Theorem – Millman’s theorem.

UNIT III TRANSIENT RESPONSE ANALYSIS EE8251 CT Notes

L and C elements -Transient response of RL, RC and RLC Circuits using Laplace transform for DC input and A.C. sinusoidal input.

UNIT IV THREE PHASE CIRCUITS EE8251 CT Notes

A.C. circuits – Average and RMS value – Phasor Diagram – Power, Power Factor and Energy.- Analysis of three phase 3-wire and 4-wire circuits with star and delta connected loads, balanced & un balanced – phasor diagram of voltages and currents – power measurement in
three phase circuits.

UNIT V RESONANCE AND COUPLED CIRCUITS EE8251 Notes

Series and parallel resonance – their frequency response – Quality factor and Bandwidth – Self and mutual inductance – Coefficient of coupling – Tuned circuits – Single tuned circuits.

Subject name Circuit Theory
Subject Code EE8251
Regulation 2017 Regulation

EE8251 Circuit Theory Notes Click Here to Download

EE8251 Circuit Theory Syllabus

EE8251 Circuit Theory Important Questions

EE8251 Circuit Theory Question Bank

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BE8252 Question Bank BASIC CIVIL AND MECHANICAL ENGINEERING BCM Regulation 2017 Anna University

BE8252 Question Bank BASIC CIVIL AND MECHANICAL ENGINEERING

BE8252 Question Bank BASIC CIVIL AND MECHANICAL ENGINEERING BCM Regulation 2017 Anna University free download. BASIC CIVIL AND MECHANICAL ENGINEERING Question Bank BE8252 pdf free download.

Sample BE8252 Question Bank BASIC CIVIL AND MECHANICAL ENGINEERING BCM

6
(i) What are all the solutions needed to improve the ground and soil?(6)
BTL-1
Remember
(ii) What are all the factors affecting the water resources. (7)
BTL-5
Evaluate
7
(i) State the significance of Geotechnical Engineering. (6)
BTL-4
Analyse
(ii) Explain the various techniques used in Geotechnical Engineering.(7)
BTL-5
Evaluate
8
Explain in detail the contributions of Mechanical Engineering to the welfare of Society.
BTL-4
Analyse
9
Explain in detail the significance of Production Engineering.
BTL-5
Evaluate
10
Explain the significance and functions of Automobile Engineering.
BTL-4
Analyse
11
Explain in detail the features of Energy Engineering.
BTL-4
Analyse
12
(i) Describe in detail, the functions of Fluid Mechanics. (6)
BTL-4
Analyse
(ii) Specify the significance of Fluid Machinery. (7)
BTL-5
Evaluate
13
Describe the various forms and sources of energy.
BTL-4
Analyse
14 BE8252 Question Bank Basic Civil and Mechanical Engineering
Describe in detail, the significance and functions of Strength of materials.
BTL-5
Evaluate
PART C (15 MARKS)
1
Compose all the factors considered for the site preparation for construction.
BTL-5
Evaluate
2
Explain the Environmental engineering aspects.
BTL-5
Evaluate
3 BE8252 Question Bank Basic Civil and Mechanical Engineering
Compose all the major components in Automobile system.
BTL-5
Evaluate
4
Explain the Interdisciplinary concepts in Civil and Mechanical Engineering

3
Explain the classification, qualities and constitution of brick.
BTL-4
Analyse
4
Discuss the properties and uses of cement concrete.
BTL-2
Understand
5 BE8252 Question Bank Basic Civil and Mechanical Engineering
The area enclosed between the survey line, irregular boundary line, first and last offsets by Mean ordinate rule, Simpson’s rule and trapezoidal rule. The following perpendicular offsets were taken at 10m intervals from a survey line to an irregular boundary line: 0.00, 3.20, 5.40, 6.00, 4.21, 3.88, 6.20, and 0.00.
BTL-6
Create
6
Describe the different types of cement. Explain their properties and uses.
BTL-1
Remember
7
Explain the ingredients of cement along with their properties.
BTL-1
Remember
8
Describe the tests conducted on bricks.
BTL-1
Remember
9 BE8252 Question Bank Basic Civil and Mechanical Engineering
Explain with neat sketch a dumpy level and indicate its parts.
BTL-4
Analyse

Subject name BASIC CIVIL AND MECHANICAL ENGINEERING
Short Name BCM
Semester 2
Subject Code BE8252
Regulation 2017 regulation

BE8252 BASIC CIVIL AND MECHANICAL ENGINEERING Question Bank Click Here To Download

BE8252 BASIC CIVIL AND MECHANICAL ENGINEERING Notes

BE8252 BASIC CIVIL AND MECHANICAL ENGINEERING Syllabus

BE8252 BASIC CIVIL AND MECHANICAL ENGINEERING Question Paper

BE8252 BASIC CIVIL AND MECHANICAL ENGINEERING Important Questions