EC25C01 Electron Devices
Anna University Syllabus, Notes, Important Questions, Question Bank, Question Paper are available in Padeepz App
Semiconductor: Types, Conductivity, Electron energy levels and energy band diagram,
Carrier concentration, Mass action law, Characteristics and behavior of intrinsic
semiconductors, Variation in properties with temperature, Carrier drift and diffusion,
Current density equation, Excess carrier generation and recombination rates, Carrier life
time. Continuity equation. EC25C01 Electron Devices NOtes
Activity: Virtual demonstration of energy levels, Drift and diffusion current.
PN Junction Diodes: Energy band diagram of open-circuited PN junction, Forward and
reverse bias characteristics, Diode resistance, Transition and diffusion capacitance,
Effect of temperature on diode behavior, Applications of PN junction diodes. EC25C01 Electron Devices Important QUestions
Special Diodes: Zener diode – breakdown mechanisms and voltage regulation,
Varactor diode, Tunnel diode, Photo diode – construction, operation, and applications.
Activities: Virtual demonstration of characteristics of junction diodes, Design of a
constant voltage regulator using Zener Diode.
Bipolar Junction Transistors: Construction, working, characteristics in CB, CE, and EC25C01 Electron Devices Question Paper
CC configurations, regions of operation, current gain, input/output characteristics, Early
effect. Other Devices: Multi-emitter transistor – construction and applications.
Practical: Input and Output characteristics of Characteristics of BJT.
Field Effect Transistors: JFET – construction, working, characteristics, parameters.
MOSFET, MOS capacitor, depletion and enhancement modes, nMOS and pMOS, EC25C01 Electron Devices NOtes
threshold voltage, transfer and output characteristics. CMOS – introduction and basic
operation.
Practical: Input and Output characteristics of Characteristics of JFET, MOSFET.
Thyristors: Shockley diode, Silicon Controlled Rectifier (SCR), TRIAC and DIAC –
operation and applications, Thyristor protection techniques.
Unijunction Transistor (UJT): Construction, characteristics and application as
relaxation oscillator.
Optoelectronic Devices: LED, LCD, Photo transistor, Opto-coupler – principle,
characteristics and applications. Power MOSFETs: Construction, switching
characteristics and applications in power circuits.
Practical: VI characteristics of SCR, UJT.
References: EC25C01 Electron Devices Important Questions
1. Neamen, D. A. (2012). Semiconductor physics and devices. Tata McGraw-Hill.
2. Boylestad, R. L., & Nashelsky, L. (2008). Electronic devices and circuit theory.
Pearson Prentice Hall.
3. Yang, C. Y. (1978). Fundamentals of semiconductor devices. McGraw-Hill
International.
4. Salivahanan, S., Suresh Kumar, N., & Vallavaraj, A. (2008). Electronic devices and
circuits. Tata McGraw-Hill.
5. Floyd, T. L. (2018). Electronic Devices: Conventional Current Version. Pearson.
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| Notes | Click Here |
| Important Questions | Click Here |
| Previous Year Question Paper | Click Here |
| Question Bank | Click Here |
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