**GE6252 Question Bank BASIC ELECTRICAL AND ELECTRONICS ENGINEERING BEEE**

GE6252 Question Bank BEEE Question Bank Regulation 2013 Anna University free download. BASIC ELECTRICAL AND ELECTRONICS ENGINEERING BEEE Question Bank pdf free download.

**Sample GE6252 Question Bank BEEE important questions BASIC ELECTRICAL AND ELECTRONICS ENGINEERING:**

1.Calculate the time taken by an electron which has been accelerated through a potential difference of 1000V to traverse a distance of 2cm.Given q=1.6X10^-19 and m=.9.1X10^-31kg.

2.State two applications of magnetic deflection.

3.Write down the expression for drift current density due to electrons.

4.Draw the resistance-temperature characteristics of thermistor and comment on it.

5.Define tunneling phenomenon.

6.Calculate the values of Ic and Ie for a transistor alpha(dc)=0.97 and Icbo=10uA and Ib is measured as 50uA.

7.Depletion MOSFET is commonly known as “Normally-ON-MOSFET”why?

(GE6252 Question Bank BASIC ELECTRICAL AND ELECTRONICS ENGINEERING BEEE Regulation 2013 Anna University)

8.What are all internal capacitance in MOSFET?

9.What is “interbase resistance “ of UJT?

10.What is ion implantation process?

11.(i)The electron bean in a CRT is displayed vertically by a magnetic field of flux density 2X10^-4wb/m2 The length of the magnetic field along the tube axis is the same as that of the electrostatic deflection plates.The final anode voltage is 800V.Derive and calculate the voltage which should be applied to the Y-deflection plates 1cm apart, to return the spot back to the centre of the screen.(10)

(ii)Describe with neat diagram the principle of operation of Dynamic scattering type LCD.(6)

12.(a)Derive the continuity equation from the first principle and also derive 3 special cases of continuity equation.(16)

(GE6252 Question Bank BASIC ELECTRICAL AND ELECTRONICS ENGINEERING BEEE Regulation 2013 Anna University)

(b)(i)Derive the Ebers-Moll model for a PNP transistor and give equation for Ie and Ic.(8) (ii)The diode current is 0.6mA when the applied voltage is 400mV and 20mA when the applied voltage is 500mV.Determine n (eta) .Assume kT/a=25mA.(8)

13.(a)Explain Hill effect.How can Hll effect be used to determine some of the properties of a semiconductor and also discuss it’s applications.(16)

Semester | 2 |

Subject | BASIC ELECTRICAL AND ELECTRONICS ENGINEERING |

Subject Code | GE6252 – BEEE |

Regulation | 2013 |

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**BASIC ELECTRICAL AND ELECTRONICS ENGINEERING GE6252 Syllabus**